3D Heterogeneous Integrated DRAM for the Intelligent Era

   Dr. Fujun BAI

   Senior Director，Xi’an UniIC Semiconductors Co. Ltd   

Abstract:

Leveraging 3D heterogeneous integration technology, Xi'an UniIC has developed SeDRAM™ platform, which enables high-density vertical interconnects between logic wafers and DRAM wafers, significantly boosting data bandwidth to the TBps level and capacity to the GBs level. SeDRAM™ demonstrates exceptional performance in a wide range of applications, including high-performance computing, LLM inference, and AI accelerators. With the continued evolution of 3D heterogeneous integration, SeDRAM™ holds promising prospects across multiple development pathways, including process scaling, multi-layer stacking, heterogeneous integration, and architectural innovation. Xi'an UniIC is dedicated to innovation and breakthroughs in memory technologies, striving to advance high-efficiency computing power in the intelligent era.

Speaker's Biography: 

Dr. Bai received his Bachelor's and Master's degrees in EE from Tsinghua University, and his Ph.D. in Electronics and Information Engineering from Xi'an Jiaotong University. He previously served as Department Manager and Director of the Product R&D Department at Xi'an UniIC Semiconductor Co., Ltd., where he was responsible for array design of various memory products. He is currently a Senior Director of the Technology and Project Cooperation Department at Xi'an UniIC, dedicated to research in 3D heterogeneous integrated memories and emerging memory technologies. With over 20 years of R&D experience in semiconductor memory products, he has driven the industrialization of multiple emerging technologies. He holds more than 30 domestic and international patents related to semiconductor chips and memory technologies, and has authored academic papers in IEDM, VLSI, and TVLSI.