Low Temperature Bonding Realized by Electrodeposited Cu Microstrucutre Design

Dr. Yunwen WU

Associate Professor, Shanghai Jiao Tong University   

Abstract:

Different structured nanotwinned Cu are electrodeposited by adjusting the electrodeposition conditions. The Nanotwinned Cu with perpendicularly alligned nanotiwns (p-ntCu) is obtained with highly (110) orientation. The p-ntCu shows abnormal grain growth at low temperature compared the the finegrain structured Cu (fg Cu). Cu-Cu direct bonding at low temperature and pressure are realized using p-nt Cu. Anisotropic grain growth occurred within the bonding joint and grain boundary migration was observed at the bonding interface. The shear strength after bonding at 250 °C was measured as 58.3 MPa on average, indicating a relatively high quality of such Cu-Cu bonding.

Speaker's Biography:

Dr.Wu focuses on advanced interconnect materials for integrated circuits and develop new interconnect technologies for advanced electronic packaging. She has published 50 academic papers in journals such as Acta Materialia and Journal of Materials Science and Technology as the first author or corresponding author, alongside 2 review articles related to interconnects in integrated circuits. She has given more than 10 invited talks at domestic and international academic conferences, and served as the international symposium chairs. Her research is funded by National Natural Science Foundation of China. She has collaborated with the leading companies in the integrated circuit to make efforts on the development of integrated circuit technology.